JFE150DCKR

• Ultra-low noise:
  • Voltage noise:
    • 0.8 nV/√ Hz at 1 kHz, I DS = 5 mA
    • 0.9 nV/√ Hz at 1 kHz, I DS = 2 mA
  • Current noise: 1.8 fA/√ Hz at 1 kHz
• Low gate current: 10 pA (max)

• Low input capacitance: 24 pF at V DS = 5 V

• High gate-to-drain and gate-to-source breakdown voltage: –40 V

• High transconductance: 68 mS

• Packages: Small SC70 and SOT-23

The JFE150 is a Burr-Brown™ discrete JFET built using Texas Instruments’ modern, high-performance, analog bipolar process. The JFE150 features performance not previously available in older discrete JFET technologies. The JFE150 offers the maximum possible noise-to-power efficiency and flexibility, where the quiescent current can be set by the user and yields excellent noise performance for currents from 50 µA to 20 mA. When biased at 5 mA, the device yields 0.8 nV/√ Hz of input-referred noise, giving ultra-low noise performance with extremely high input impedance (> 1 TΩ). The JFE150 also features integrated diodes connected to separate clamp nodes to provide protection without the addition of high-leakage, nonlinear, external diodes.

The JFE150 can withstand a high drain-to-source voltage of 40 V, as well as gate-to-source and gate-to-drain voltages down to –40 V. The temperature range is specified from –40°C to +125°C. The device is offered in 5-pin SOT-23 and SC70 packages.